V20100C-E3, vb20100c-e3, vf20100c-e3, vi20100c-e3 www.vishay.com vishay general semiconductor revision: 13-dec-16 1 document number: 88977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.50 v at i f = 5 a features ? trench mos schottky technology ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 2 75 c maximum 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters, and reverse battery protection. mechanical data case: to-220ab, ito-220ab, to-263ab and to-262aa ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? ? ? ? ? ? ? primary characteristics i f(av) 2 x 10 a v rrm 100 v i fsm 150 a v f at i f = 10 a 0.58 v t j max. 150 c package to-220ab, ito-220ab, to-263ab, to-262aa diode variation common cathode to-220ab 1 2 3 1 k 2 3 to-263ab 1 2 k to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 k heatsink pin 1 pin 2 pin 3 pin 1 pin 2 case pin 3 c 0 0 1 0 2 f v c 0 0 1 0 2 v vi20100c vb20100c tmbs ? ito-220ab 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v20100c vf20100c vb20100c vi20100c unit maximum repetitive peak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) per device i f(av) 20 a per diode 10 peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 150 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh per diode e as 150 mj peak repetitive reverse current at t p = 2 s, 1 khz, ? t j = 38 c 2 c per diode i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg -40 to +150 c
V20100C-E3, vb20100c-e3, vf20100c-e3, vi20100c-e3 www.vishay.com vishay general semiconductor revision: 13-dec-16 2 document number: 88977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 10 ma t a = 25 c v br 105 (minimum) - v instantaneous forward voltage ? per diode i f = 5 a t a = 25 c v f (1) 0.55 - v i f = 10 a 0.65 0.79 i f = 5 a t a = 125 c 0.50 - i f = 10 a 0.58 0.68 reverse current per diode v r = 70 v t a = 25 c i r (2) 17 - a t a = 125 c 5.3 - ma v r = 100 v t a = 25 c - 800 a t a = 125 c 12 25 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v20100c vf20100c vb20100c vi20100c unit typical thermal resistance per diode r ? jc 2.8 5.5 2.8 2.8 c/w ordering information (example) package preferred p/n unit weight (g) package code ba se quantity delivery mode to-220ab V20100C-E3/4w 1.881 4w 50/tube tube ito-220ab vf20100c-e3/4w 1.75 4w 50/tube tube to-263ab vb20100c-e3/4w 1.39 4w 50/tube tube to-263ab vb20100c-e3/8w 1.39 8w 800/tube tape and reel to-262aa vi20100c-e3/4w 1.452 4w 50/tube tube case temperat u re (c) a v erage for w ard c u rrent (a) 24 20 16 12 8 4 0 0 25 50 75 100 125 150 175 v 20100c v i(b)20100c resisti v e or ind u cti v e load v f20100c 0 2 4 6 8 10 12 14 16 1 8 20 04 8 12 16 20 24 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 a v erage for w ard c u rrent (a) a v erage po w er loss (w) d = t p /t t p t
V20100C-E3, vb20100c-e3, vf20100c-e3, vi20100c-e3 www.vishay.com vishay general semiconductor revision: 13-dec-16 3 document number: 88977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forw ard characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode fig. 7 - typical transient thermal impedance per diode 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage (%) t a = 150 c t a = 125 c t a = 25 c instantaneo u s re v erse c u rrent (ma) 10 100 1000 10 000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 1 10 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/w) j u nction to case v (i)20100c 1 10 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/w) j u nction to case v f20100c
V20100C-E3, vb20100c-e3, vf20100c-e3, vi20100c-e3 www.vishay.com vishay general semiconductor revision: 13-dec-16 4 document number: 88977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.415 (10.54) 0.380 (9.65) 0.635 (16.13) 0.625 (15.87) pin 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.161 (4.08) 0.139 (3.53) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pin 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.057 (1.45) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
V20100C-E3, vb20100c-e3, vf20100c-e3, vi20100c-e3 www.vishay.com vishay general semiconductor revision: 13-dec-16 5 document number: 88977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-262aa 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pin 0.411 (10.45) 0.380 (9.65) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) to-26 3 ab mountin g pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n. 0.15 (3.81) min. 0.33 (8.38) min. 0.42 (10.66) min. 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) min.
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